Products - GPR25L0805E

General Description

The GPR25L0805Eis 8,388,608 bit serial Flash memory, which is configured as 1,048,576 x 8 internally. The GPR25L0805E feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.

Features

• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 8M: 8,388,608 x 1 bit structure or 4,194,304 x 2 bits (two I/O read mode) structure or 2,097,152 x 4 bits (four I/O read mode) structure
• 256 Equal Sectors with 4K byte each
  • Any Sector can be erased individually
• 16 Equal Blocks with 64K byte each
  • Any Block can be erased individually
• Single Power Supply Operation
  • 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• High Performance
  • Fast read
  • 1 I/O: 108MHz with 8 dummy cycles
  • 2 I/O: 80MHz (2.7V~3.6V); 104MHz (3.0V~3.6V) with 4 dummy cycles
  • 4 I/O: 108MHz with 6 dummy cycles
  • Fast access time: 108MHz serial clock
  • Serial clock of two I/O read mode: 80MHz (2.7V~3.6V); 104MHz (3.0V~3.6V)
  • Serial clock of four I/O read mode: 108MHz, which is equivalent to 432MHz
  • Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page)
  • Byte program time: 9us (typical)
  • Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.4s(typ.) /block (64K-byte per block); 3s(typ.) /chip
• Low Power Consumption
  • Low active read current: 25mA(max.) at 108MHz, and 10mA(max.) at 50MHz
  • Low active programming current: 20mA (max.)
  • - Low active erase current: 20mA (max.)
  • Low standby current: 20uA (typ.) ; 50uA (max.)
  • Deep power-down current: 3uA (typ.) ; 20uA (max.)
• Minimum 100,000 erase/program cycles
• 20 years data retention