Products - GPR25L1603E

GPR25L1603E Copy Link.

Density (bit)Working Voltage(V)Operating frequency (MHz)

General Description

The GPR25L1603E are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it is in two or four I/O read mode, the structure becomes 8,388,608 bits x 2 or 4,194,304 bits x 4. The GPR25L1603E feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.


  • Serial Peripheral Interface compatible -- Mode 0 and Mode 3
  • 16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure or 4,194,304 x 4 bits (four I/O read mode) structure
  • 512 Equal Sectors with 4K byte each
    • Any Sector can be erased individually
  • 32 Equal Blocks with 64K byte each
    • Any Block can be erased individually
  • Single Power Supply Operation
    • 2.7 to 3.6 volt for read, erase, and program operations
  • Latch-up protected to 100mA from -1V to Vcc +1V
  • High Performance
    • Fast read
    • 1 I/O: 104MHz with 8 dummy cycles
    • 2 I/O: 85MHz with 4 dummy cycles
    • 4 I/O: 85MHz with 6 dummy cycles
    • Fast access time: 104MHz serial clock
    • Serial clock of four I/O read mode : 85MHz, which is equivalent to 340MHz
    • Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
    • Byte program time: 9us (typical)
    • Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip
  • Low Power Consumption
    • Low active read current: 25mA(max.) at 104MHz and 10mA(max.) at 33MHz
    • Low active programming current: 20mA (max.)
    • Low active erase current: 20mA (max.)
    • Low standby current: 25uA (max.)
  • Typical 100,000 erase/program cycles
  • 20 years data retention

Data Sheet

GPR25L1603EV10_ds.pdf   Copy Link.

Application / Engineering Note

AN0176-SPI_FlashApplication_Note-16.pdf   Copy Link.
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