Products - GPR25L1603E

General Description

The GPR25L1603E are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it is in two or four I/O read mode, the structure becomes 8,388,608 bits x 2 or 4,194,304 bits x 4. The GPR25L1603E feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.

Features

• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure or 4,194,304 x 4 bits (four I/O read mode) structure
• 512 Equal Sectors with 4K byte each
  • Any Sector can be erased individually
• 32 Equal Blocks with 64K byte each
  • Any Block can be erased individually
• Single Power Supply Operation
  • 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• High Performance
  • Fast read
  • 1 I/O: 104MHz with 8 dummy cycles
  • 2 I/O: 85MHz with 4 dummy cycles
  • 4 I/O: 85MHz with 6 dummy cycles
  • Fast access time: 104MHz serial clock
  • Serial clock of four I/O read mode : 85MHz, which is equivalent to 340MHz
  • Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
  • Byte program time: 9us (typical)
  • Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip
• Low Power Consumption
  • Low active read current: 25mA(max.) at 104MHz and 10mA(max.) at 33MHz
  • Low active programming current: 20mA (max.)
  • Low active erase current: 20mA (max.)
  • Low standby current: 25uA (max.)
• Typical 100,000 erase/program cycles
• 20 years data retention