GPR25L0805E
| Density (bit) | Working Voltage(V) | Operating frequency (MHz) |
|---|---|---|
| 8M | 2.7~3.6 | 108 |
General Description
The GPR25L0805Eis 8,388,608 bit serial Flash memory, which is configured as 1,048,576 x 8 internally. The GPR25L0805E feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.
Features
- Serial Peripheral Interface compatible -- Mode 0 and Mode 3
- 8M: 8,388,608 x 1 bit structure or 4,194,304 x 2 bits (two I/O read mode) structure or 2,097,152 x 4 bits (four I/O read mode) structure
- 256 Equal Sectors with 4K byte each
- Any Sector can be erased individually
- 16 Equal Blocks with 64K byte each
- Any Block can be erased individually
- Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
- Latch-up protected to 100mA from -1V to Vcc +1V
- High Performance
- Fast read
- 1 I/O: 108MHz with 8 dummy cycles
- 2 I/O: 80MHz (2.7V~3.6V); 104MHz (3.0V~3.6V) with 4 dummy cycles
- 4 I/O: 108MHz with 6 dummy cycles
- Fast access time: 108MHz serial clock
- Serial clock of two I/O read mode: 80MHz (2.7V~3.6V); 104MHz (3.0V~3.6V)
- Serial clock of four I/O read mode: 108MHz, which is equivalent to 432MHz
- Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.4s(typ.) /block (64K-byte per block); 3s(typ.) /chip
- Low Power Consumption
- Low active read current: 25mA(max.) at 108MHz, and 10mA(max.) at 50MHz
- Low active programming current: 20mA (max.)
- - Low active erase current: 20mA (max.)
- Low standby current: 20uA (typ.) ; 50uA (max.)
- Deep power-down current: 3uA (typ.) ; 20uA (max.)
- Minimum 100,000 erase/program cycles
- 20 years data retention
Data Sheet
GPR25L0805EV10_ds.pdf
Application / Engineering Note
AN0176-SPI_FlashApplication_Note-16.pdf
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